mosfet used as a switch

Brand Name:Infineon Technologies

Model Number:IRF7726TRPBF

Place of Origin:Multi-origin

...Ω. 3. It provides low input and gate capacitance, making it suitable for high-frequency switching applications. 4. It offers low gate charge and fast switching times, making it suitable for high-speed switching applications. 5. It is RoHS compliant and is

Brand Name:Toshiba

Model Number:2SC5589

Place of Origin:Original Factory

...Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works from a 3.0V to 36V input voltage range, and provides up to 4A of continuous output current. The output voltage is adjustable from 30V down to 0.8V. The AOZ1284 integrates an N-channel high-side power MOSFET. The switching

Brand Name:JEUNKEI

Model Number:JY11M

Place of Origin:China

General Description: The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Brand Name:Hua Xuan Yang

Model Number:50P03NF TO-252

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. Mosfet...

Brand Name:Lingxun

Place of Origin:China

...ideal for use in battery-powered devices that require low power consumption. This MOSFET also offers high switching speeds and low gate charge, making it suitable for use in Digital Logic Circuits. Additionally, our Low Voltage MOSFET is RoHS compliant,

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON

Brand Name:HT

Model Number:F7N65L TO-220F-3L

Place of Origin:China

...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This device uses the most advanced silicon carbide technology to greatly reduce conduction loss, switching...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:original

Model Number:NX7002AK,215

...MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET N-CH 60V 0.19A 3-Pin TO-236AB T/R Relay driver High-speed line driver Low-side loadswitch Switching...

Brand Name:ST Micro electronics

Model Number:STI20N60M2-EP

Place of Origin:Shenzhen, China

...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP)

Brand Name:INFINEON

Model Number:IPD082N10N3

Place of Origin:original

...MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for converters and regulators Conclusion: High voltage capability: Vds=100V Low conduction resistance: Rds (on)=8.2m Ω (typ.) Fast switching...

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

...MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching...

Brand Name:IOR

Model Number:IRF3205PBF

Place of Origin:CHINA

...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use...

Brand Name:TOSHIBA

Model Number:TK39A60W,S4VX

Place of Origin:Original

... epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details

Place of Origin:PHILIPPINE

Brand Name:Micrel Semiconductor

Model Number:MIC5016BWM

...designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5016/7 can sustain an on-state output indefinitely. The MIC5016/7 operates from a 2.75V to 30V supply. In highside configurations, the

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ...

Brand Name:STMicroelectronics

Model Number:STF28NM50N

Place of Origin:China

...MOSFET 500V/28A Rating Low 0.135Ω Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS & Motor Drives Features • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using...