n channel igbt 650v

Place of Origin:CN

Brand Name:Original Factory

Model Number:FGHL50T65SQDT

Integrated Circuit Chip FGHL50T65SQDT 650V 100A 268W N−Channel IGBT Field Stop Transistors [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVB150N65S3F

...Channel FRFET 650V 24A 150mΩ D2PAK [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT...

Brand Name:WeEn Semiconductors

Model Number:WG50N65DHWQ

...IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed with low switching losses and features smooth switching behavior that avoids voltage overshoot and reduces system EMI. The WG50N65DHWQ IGBT...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MBM50F12

Quick Detail: Silicon N-channel IGBT Description: Silicon N-channel IGBT Applications: * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery ...

Brand Name:Power Integrations

Model Number:2SC0435T2G1-17

Place of Origin:TH

Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes...

Brand Name:ONSEMI

Model Number:MGP20N40CL

Place of Origin:Original

MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from ...

Brand Name:TOSHIBA

Model Number:GT20J301

Place of Origin:JAPAN

GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High...

Brand Name:STMicroelectronics

Model Number:STGP7NC60HD

Place of Origin:CHINA

STGP7NC60HD GP7NC60HD TO220 N-channel very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low...

Place of Origin:Malaysia

Brand Name:Original

Model Number:RJP30E2

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:Toshiba

Model Number:TK090N65Z,S1F(S

Place of Origin:JAPAN

Product Description: Power IC Chip Product Overview Power IC Chip is a type of chip manufactured by Toshiba. It has a wide temperature range from -55℃ to +150℃ and is widely used in many industries. This chip is designed with MOSFET N technology, and ...

Brand Name:Krunter

Model Number:KVP200H12E4-3TB

KVP200H12E4-3TB Compact Package Low Switching Loss Assembled in PCB Integrated NTC temperature sensor Isolated Baseplate by Al2O3 substrate Specification Parameters TYPE T1, T4 T2, T3 Circuit Package Technology VCES Volts IC Amps VCE(SAT) Volts Ptot Watts ...

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...

Brand Name:Original Manufacturer

Model Number:STGWA60H65DFB

Place of Origin:Original

... - IGBTs - Single Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 240A Vce(on)

Brand Name:SAIKELI

Model Number:STD6N95K5

Place of Origin:China

STB57N65M5 D2PAK MOSFET N channel 650V 42A Description: Type: N-channel drain source voltage (Vdss): 650V continuous drain current (Id): 42A power (Pd): 250W conduction resistance (RDS (on) @ Vgs, Id): 63m Ω @ 10V, 21A threshold voltage (Vgs (th) @ Id): 5V...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

High Voltage IGBT with Faster Switching Speed and High Power *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {...

Brand Name:HT

Model Number:F7N65L TO-220F-3L

Place of Origin:China

F7N65L TO-220F-3L N-CHANNEL POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as ...

Brand Name:INFINEON

Model Number:IPW65R080CFDA

... IPW65R080CFDA MOSFET N-CH 650V 43.3A TO247-3 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source...

Brand Name:Infineon Technologies

Model Number:SPW47N60C

Place of Origin:USA

Manufacturer: Infineon Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous ...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching ...