n channel mosfet 20v vds

Brand Name:Vishay

Model Number:SI1902CDL-T1-GE3

MOSFET 20V Vds 12V Vgs SC70-6 Product Attribute Attribute Value Select Attribute Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-363-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds...

Brand Name:Original

Model Number:SI2302CDS-T1-GE3

Place of Origin:Original

SI2302CDS-T1-GE3 Chips Integrated Circuits IC MOSFET 20V Vds 8V Vgs SOT-23 PRODUCT DESCRIPTION Part number # SI2302CDS-T1-GE3 is manufactured by Vishay Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMA1023PZ

High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench^® MOSFET -20V , -3.7A, 72mΩ High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET -20V , -3.7A, 72mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

Product Introduction of Infineon IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-...

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms ...

Brand Name:Diodes

Model Number:DMN26D0UFB4-7

Place of Origin:UAS

...MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of channels: 1 Channel Vds...

Brand Name:ON Semiconductor

Model Number:BSS123LT1G

Place of Origin:China

BSS123LT1G N-Channel MOSFET Low 170mandOmega; RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ...

Brand Name:Infineon Technologies

Model Number:IRF530NPBF

Place of Origin:original

...MOSFET Power Electronics High Power N Channel MOSFET Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Brand Name:Ti

Model Number:SI7139DP-T1-GE3

...Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8 FEATURES TrenchFET® power MOSFETs Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) -60 0.0145 at VGS = -10 V -14.4 0.0190 at VGS = -4.5 V -12.6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-Source Voltage VDS...

Place of Origin:US

Brand Name:Original

Model Number:SI2399DS-T1-GE3

...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 34 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds...

Brand Name:Infineon Technologies

Model Number:SPD06N80C3

Place of Origin:CHINA

... Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V FET Feature -

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

...MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel...

Brand Name:onsemi

Model Number:ATP114-TL-H

Place of Origin:United States

...Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...

Brand Name:Infineon

Model Number:IRFP064NPBF

Place of Origin:Original

...Channel Mosfet 55V 98A 8mOhm 113.3nCAC TO-247-3 Specifications Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - ...

Brand Name:Diodes Incorporated

Model Number:W5500

Place of Origin:Taiwan

... Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id)

Brand Name:Original Factory

Model Number:NTMYS5D3N04CTWG

Place of Origin:CN

...Channel MOSFETs Transistors 4-LFPAK​ Product Description Of NTMYS5D3N04CTWG NTMYS5D3N04CTWG is 40V, 5.3mOhm, 71A - Power, Single N-Channel MOSFET Transistors. Specification Of NTMYS5D3N04CTWG Part Number: NTMYS5D3N04CTWG Id - Continuous Drain Current: 71 A Package / Case: LFPAK-4 Transistor Polarity: N-Channel Technology: Si Vds...

Brand Name:Anterwell

Model Number:IRFP9240PBF

Place of Origin:original factory

...Requirements • Lead (Pb)-free Available PRODUCT SUMMARY VDS (V) - 200 V RDS(on) (Max.) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with