rjp30e2 silicon n channel igbt

Place of Origin:Malaysia

Brand Name:Original

Model Number:RJP30E2

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MBM50F12

Quick Detail: Silicon N-channel IGBT Description: Silicon N-channel IGBT Applications: * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery ...

Brand Name:TOSHIBA

Model Number:30J127

Place of Origin:Original

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Fast switching (FS): ...

Brand Name:TOSHIBA

Model Number:GT20J301

Place of Origin:JAPAN

GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High...

Brand Name:Original Factory

Model Number:MSC100SM70JCU3

Place of Origin:CN

Automotive IGBT Modules MSC100SM70JCU3 N-Channel IGBT Silicon Carbide Modules 365W Product Description Of MSC100SM70JCU3 MSC100SM70JCU3 is Silicon carbide (SiC) Schottky diode, a buck chopper 700 V, 124 A full Silicon Carbide (SiC) power module. ...

Brand Name:Infineon Technologies

Model Number:IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1 N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12 Infineon Technologies 1200V CoolSiC™ Modules Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and ...