supper junction mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET...

Categories:PMIC Chip

Country/Region:china

... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-...

Brand Name:Original Factory

Model Number:IMYH200R012M1H

Place of Origin:CN

..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V Current - Continuous Drain (Id) @ 25°C 123A (Tc)

Brand Name:Hua Xuan Yang

Model Number:HXY4409

Place of Origin:ShenZhen China

... application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

Brand Name:Infineon Technologies

Model Number:IRF9321TRPBF

Place of Origin:original

...maximum drain current of 30A, a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is constructed with a P-channel MOSFET with a fast switching speed and low on-state resistance. This

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Original Manufacturer

...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:VISHAY

Model Number:SUD25N06-45L

Place of Origin:Original

...MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 25 A Avalanche Current IAR 25 A Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 31 mJ Operating Junction...

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ...

Brand Name:IR

Model Number:F1405S

Place of Origin:CHINA

... MOSFET Typical Applications Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:RS3A THRU RS3M

RS3A THRU RS3M SURFACE MOUNT FASTRE COVERY RECTIFIER FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement ...

Place of Origin:PHILIPPINE

Brand Name:International Rectifier

Model Number:IRF7342Q

...MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction...

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:DIODES

Model Number:2N7002DW-7-F

Place of Origin:CHINA

...MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.21.00.95 Automotive No PPAP No Product Category Small Signal Configuration Dual Channel Mode Enhancement Channel Type N Number of Elements per Chip 2 Maximum Drain Source Voltage (V) 60 Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage (V) 2 Operating Junction...

Brand Name:Maplesemi

Model Number:SLH60R080SS

Place of Origin:Original

General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy ...

Place of Origin:US

Brand Name:Original

Model Number:2SA1837/2SC4793

Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC ...

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Malaysia

... Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C

Brand Name:UCHI

Model Number:78L05

Place of Origin:Dongguan China

FEATURES 1.Maximum output current IOM : 0.1A 2.Output voltage VO : 5V 3. Continuous total dissipation PD : 0.6 W (Ta= 25 ℃) ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) Parameter Symbol Value Unit Input Voltage ...

Brand Name:IXYS

Model Number:IXTH200N10T

Place of Origin:Original Factory

...MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction...

Categories:Onsemi Ic

Country/Region:china

... N-Channel Power MOSFET Drain-Source Breakdown Voltage: 100V Continuous Drain Current: 10A On-Resistance: 10mΩ (typ) Operating Junction Temperature: -40°C to 150°C Package: SO-8 The NCP1060AD100R2G is an N-channel power MOSFET from ON Semiconductor. ...