ultra low rds on fast switching mosfet

Brand Name:onsemi

Model Number:KSD1408YTU

Place of Origin:China

...MOSFET 100A Current 3.8mΩ Low Rds(on) Fast Switching High Efficiency 150°C Rating Ultra-Low Gate Charge Superior dv/dt Ruggedness Halogen-Free & RoHS Compliant Features 1:Ultra-Low On-Resistance (3.8mΩ): Minimizes conduction losses for higher system efficiency and reduced heat generation 2:High Current Capability (100A): Supports power-intensive applications including motor drives and power supplies 3:Excellent Switching

Brand Name:onsemi

Model Number:FDMS039N08B

Place of Origin:original

...MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 19.4A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds...

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...

Brand Name:Lingxun

Place of Origin:China

Model Number:CS2N65A2

... MAX Typ Typ CS2N65A2 TO-220F N 2 650 ±30 3 4 4000 4500 11 295 Product Description: The High Voltage MOSFET product features a gate-source voltage (Vgs) of ±30V, providing ample voltage for most switching applications. Additionally, this MOSFET has been

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...

Brand Name:JUYI

Model Number:JY2504NPM

Place of Origin:China

... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC/DC Converter ● DC Motor Control ●

Brand Name:IOR

Model Number:IRF540NS

Place of Origin:CHINA

... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: Super Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent...

Brand Name:Original brand

Model Number:DMHT3006LFJ-13

Place of Origin:Original

Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY2312

... Switching Product Summary The G40N10 uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

Brand Name:Infineon

Model Number:IRF3205PbF

Place of Origin:Original Factory

IRF3205PbF HEXFET® Power MOSFET 55V 98A TO-220 MOSFET Transistors Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined...

Brand Name:IR

Model Number:IRFP064N

Place of Origin:CHINA

... Fully Avalanche Rated Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

JY2605M Dual N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge...

Brand Name:Huixin

Model Number:MMBT7002K

Place of Origin:China

...MOSFET 60V 115mA N-Channel SC-70 SOT-323 These Devices are Pb−Free and are RoHS Compliant , Ultra−Small Surface Mount Package,Low Input/Output Leakage, Fast Switching Speed,Improved system efficiency. MMBT7002W SOT-323 Datasheet.pdf FEATURES 1. High density cell design for low RDS(ON) 2. Voltage controlled small signal switch...

Brand Name:HT

Model Number:D7N65 TO-252W

Place of Origin:China

...MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=3.5A • Fast switching

Brand Name:Hua Xuan Yang

Model Number:AOD409

Place of Origin:ShenZhen China

...Switching Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:STW48N60DM2

Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS...

Brand Name:original

Model Number:DMN5L06DWK7

Place of Origin:original

... Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and ...

Brand Name:INFINEON

Model Number:IPD082N10N3

Place of Origin:original

...MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for converters and regulators Conclusion: High voltage capability: Vds=100V Low conduction resistance: Rds (on)=8.2m Ω (typ.) Fast switching...

Model Number:FDS6699S

Place of Origin:America

Brand Name:Fairchild

... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) ...