p channel power mosfet 1 9a

Place of Origin:China

Brand Name:ONSEMI

Model Number:ECH8655R

High Power MOSFET ECH8655R Dual N-Channel Power MOSFET 24V, 9A, 17mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

...MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power...

Brand Name:onsemi

Model Number:FDC610PZ

Place of Origin:original

... MOSFET–20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0.5 Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 4

Brand Name:STMicroelectronics

Model Number:STP10NK80ZFP

Place of Origin:CHINA

...Channel MOSFET 800V 9A (Tc) 40W (Tc) Through Hole TO-220FP FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V FET Feature - Power

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:10G03S

...Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P-Channel VDS = -30V,ID = -9A RDS(ON) < 37mΩ@ VGS=-10V High power...

Place of Origin:Malaysia

Brand Name:ST

Model Number:STP10NK80ZFP

... MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY Applications: HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE Specifications: Datasheets ST(P,W)10NK80Z(FP)

Model Number:P10NK80ZFP

Place of Origin:original factory

STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A 9 A 9 A 160...

Brand Name:Anterwell

Model Number:STP10NK80ZFP

Place of Origin:original factory

STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A 9 A 9 A 160...

Brand Name:Original Factory

Model Number:QH8MA4TCR

Place of Origin:CN

...-power, 8-pin, surface mount molded package. Specification Of QH8MA4TCR Part Number QH8MA4TCR Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 15V Power - Max 1.5W Operating Temperature 150°C (TJ) Features Of

Brand Name:onsemi

Model Number:NCP51560BBDWR2G

Place of Origin:USA

... output current capability. The NCP51560 is intended for fast switching to drive power MOSFETs and SiC MOSFET power switches. Short and matched propagation delays are also featured on the devices. The onsemi NCP51560 Isolated Dual-Channel Gate Driver has a

Place of Origin:Original

...) (Max) @ Vgs 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V Vgs (Max) - FET Feature - Power Dissipation (Max) 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs 1.8 Ohm @ 1.9A,

Categories:Onsemi Ic

Country/Region:china

...typ) Continuous Drain Current: 0.9A Fast Switching Speeds TO-220 FullPak 2L Package The NCV84090DR2G is an N-channel power MOSFET from ON Semiconductor. Key Features: Designed for efficient switching of currents up to 0.9A Low RDS(on) minimizes conduction...

Brand Name:Texas Instruments

Model Number:UCC27322DR

UCC27322DR DrivenConfiguration Low-Side ChannelType Single NumberofDrivers 1 GateType N-Channel, P-Channel MOSFET Voltage-Supply 4V ~ 15V LogicVoltage-VILVIH 1.1V, 2.7V Current-PeakOutput(SourceSink) 9A, 9A InputType Non-Inverting HighSideVoltage-Max(...

Brand Name:Original

Model Number:BRCS4606SC

Place of Origin:Original

...MOSFET RoHS RoHS Package SOP-8 Manufacturer Foshan Blue Rocket Elec Brand Category Authorized Brands Packaging Tape & Reel (TR)  FET Type N & P Channel Drain to Source Voltage(Vdss) 30V Continuous Drain Curren (Id) @ 25°C:6.9A,6A Vgs(th) (Max) @ Id 1.3V @ 250uA Rds On (Max) @ Id, Vgs 165 mΩ @ 10A,10V Power